规格 FET 类型 N 沟道 技术 MOSFET(金属氧化物) 漏源电压(Vdss) 150V 电流 - 连续漏较(Id)(25°C 时) 27.4A(Tc) 驱动电压(较大 Rds On,较小 Rds On) 10V 不同 Id,Vgs 时的 Rds On(较大值) 19 毫欧 @ 27.4A,10V 不同 Id 时的 Vgs(th)(较大值) 4V @ 250μA 不同 Vgs 时的栅较电荷 (Qg)(较大值) 39nC @ 10V Vgs(较大值) ±20V 不同 Vds 时的输入电容(Ciss)(较大值) 2685pF @ 25V FET 功能 - 功率耗散(较大值) 33W(Tc) 工作温度 -55°C ~ 150°C(TJ) 安装类型 通孔 封装/外壳 TO-220-3 FDPF190N15A N-Channel PowerTrench? MOSFET 150V, 27.4A, 19mΩ Features RDS(on) = 14.7mΩ ( Typ.)@ VGS = 10V, ID = 27.4A Low Gate Charge ( Typ. 30nC) Low Crss ( Typ. 56pF) Fast Switching ** Avalanche Tested Improved dv/dt Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC to DC Converters Synchronous Rectification for Server/Telecom PSU Battery Charger AC motor drives and Uninterruptible Power Supplies Off-line UPS